دیتاشیت 6HP04CH-TL-W
مشخصات دیتاشیت
| نام دیتاشیت |
6HP04CH
|
| حجم فایل |
287.38
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات
-
RoHS:
true
-
Type:
-
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
onsemi 6HP04CH-TL-W
-
Power Dissipation (Pd):
-
-
Total Gate Charge (Qg@Vgs):
-
-
Drain Source Voltage (Vdss):
-
-
Input Capacitance (Ciss@Vds):
-
-
Continuous Drain Current (Id):
-
-
Gate Threshold Voltage (Vgs(th)@Id):
-
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
-
-
Package:
SOT-23
-
Manufacturer:
onsemi
-
Series:
-
-
Packaging:
Cut Tape (CT)
-
Part Status:
Active
-
FET Type:
P-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
60V
-
Current - Continuous Drain (Id) @ 25°C:
370mA (Ta)
-
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
-
Rds On (Max) @ Id, Vgs:
4.2Ohm @ 190mA, 10V
-
Vgs(th) (Max) @ Id:
-
-
Gate Charge (Qg) (Max) @ Vgs:
0.84nC @ 10V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
24.1pF @ 20V
-
FET Feature:
-
-
Power Dissipation (Max):
-
-
Operating Temperature:
150°C (TJ)
-
Mounting Type:
Surface Mount
-
Supplier Device Package:
3-CPH
-
Package / Case:
TO-236-3, SC-59, SOT-23-3
-
Base Part Number:
6HP04
-
detail:
P-Channel 60V 370mA (Ta) Surface Mount 3-CPH
